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| High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz Features Bandwidth: 0.80 GHz to 1.0 GHz 1.0 dB Insertion Loss, Typical 12 dB Return Loss, Typical 25 dB Attenuation, Typical 50 dBm Input IP3, Typical (1MHz Offset, @+0dBm Pinc) * 0 - 3.0 Volts Control Voltage @3.3mA Typical * RoHs Compliant * * * * * MA4VAT907-1061T V3 Extra Features * Covers the following Bands: * GSM * AMPS * Usable Bandwidth: 0.60 GHz to 1.20 GHz * 1.5 dB Insertion Loss, Typical * 1.8:1 VSWR, Typical * 18.5 dB Attenuation, Typical SOIC-8 PIN Configuration (Topview) PIN 1 2 Function DC1 GND GND RFin/out RFout/in GND GND DC2 Symetrical as RF Input/Ouput Symetrical as RF Input/Ouput Comments Description and Applications M/A-COM's MA4VAT907-1061T is a HMIC PIN Diode Variable Attenuator which utilizes an integrated 90 degree 3dB hybrid with a pair of Silicon PIN Diodes to perform the required attenuation function as D.C. Voltage (Current) is applied. This device operates from 0 to 2.77Volts at 3.0mA typical control current for maximum attenuation. The user can add external biasing resistors to the bias ports for higher voltage requirements as required. M/A-COM's MA4VAT907-1061T PIN Diode Variable Attenuator is designed for AGC Circuit Applications requiring: * Lower Insertion Loss * Lower distortion through attenuation * Larger dynamic range for wide spread spectrum applications 3 4 5 6 7 8 Absolute Maximum Ratings @ +25 C Parameter Operating Temperature Storage Temperature Junction Temperature RF C.W. Incident Power Reversed Current @ -30 V Control Current Maximum Ratings -40 C to +85 C -65 C to +150 C +175 C +33 dBm C.W. 50nA 50 mA per Diode Notes: 1. All the above values are at +25 C, unless otherwise noted. 2. Exceeding these limits may cause permanent damage. 1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz Electrical Specifications @ +25 C Parameter Frequency Band Unit Min MA4VAT907-1061T V3 Typ Max Low Loss RF Parameter (Pin = +10 dBm, except for P1dB, & IP3) Insertion Loss Input Return Loss Output Return Loss P1dB Input IP3 Control Voltage 0.80 GHz--1.00 GHz dB dB dB dBm dBm V 11 11 30 45 1.0 12 12 49 0 V @ OuA 1.2 - Maximum Attenuation RF Parameter (Pin = +10 dBm, except for P1dB, & IP3) Maximum Attenuation Input Return Loss @ Max Attenuation Output Return Loss @ Max Attenuation Input IP3 Control Voltage @ Max Attenuation 0.80 GHz--1.00 GHz dB dB dB dBm V 18.5 15 15 36 24 21 21 39 3.0 V @ 3.35 mA - Typical RF Performance Over Industry Designated RF Frequency Bands Band Freq (MHz) AMPS RX TX 824-849 869-894 I. Loss (dB) 0.9 0.9 Att. (dB) 22 22 R. Loss (dB) 12 12 IIP3 (dBm) 50 50 Phase -Relative(Degree) -15 GSM RX TX 880-915 925-960 1.2 1.2 20 20 11 11 50 50 -20 Notes: 1. All are typical values only. 2. Relative phase is the measured Insertion Phase difference between Insertion Loss and 15 dB Attenuation. (Please refer to the plots below) 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz Plots of Typical RF Characteristics @ +25 C Typical Insertion Loss & Attenuation Plot MA4VAT907-1061 Typical Attenuation 0 -5 0 -5 MA4VAT907-1061T V3 Typical Attenuation vs Voltage MA4VAT907-1061 Attenuation vs Control Voltage Attenuation (dB) 0.700 0.800 0.900 1.000 1.100 1.200 Attenuation (dB) -10 -15 -20 -25 -30 0.600 -10 -15 -20 -25 -30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Frequency (GHz) 0V/0mA 1V/0.55mA 1.28V/0.90mA 1.87V/1.72mA 2.33V/2.37mA 2.75V/2.95mA 3.0V/3.35mA Bias Voltage (V) 800MHz 900MHz 1000MHz Typical Return Loss @ All Attenuation Levels Plot MA4VAT907-1061 Typical Input Return Loss 0 Typical IIP3 vs Attenuation Plot MA4VAT907-1061 Typical IP3 vs Bias Voltage @900MHz (1MHz Offset, +10dBm Pin) 70 -5 60 50 Attenuation (dB) -10 IP3 (dBm) -15 -20 -25 -30 0.600 0.700 0.800 0.900 1.000 1.100 1.200 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Bias Voltage (V) Frequency (GHz) Typical Relative Phase Shift Per Attenuation (Voltage) Plot MA4VAT907-1061 Relaive Phase vs Control Voltage 90 70 50 30 10 -10 -30 -50 -70 -90 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 For Reference ONLY: * Insertion Loss = 0.00 V @ 0.00 mA = 1.30 V @ 0.95 mA = 1.94 V @ 1.78 mA = 2.36 V @ 2.42 mA = 2.77 V @ 3.00 mA Relative Phase (Degree) * * * * * 5dB Attenuation 10dB Attenuation 15dB Attenuation Max Attenuation 20dB Anttenuation = 2.67 V @ 2.90 mA Bias Voltage (V) 800MHz 900MHz 1000MHz 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz MA4VAT907-1061T V3 Package PIN Designation, External Components, and Equivalent Circuit Cbias Lbia s Control Curren t Rbias RF I N/OUT Cblock Lbia s Cbias Cblock RF OUT/ IN External Bias Components Rbias= 680 Ohms ( 3.0 V @ 3.5 mA ) Lbias= 150 nH Cbias =100 pF Cblock =100 pF 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. |
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